1. Product Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral latticework, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting extraordinary atomic bond strength.
The Si– C bond, with a bond energy of about 318 kJ/mol, is among the toughest in architectural ceramics, giving superior thermal security, solidity, and resistance to chemical assault.
This durable covalent network results in a product with a melting point exceeding 2700 Ā° C(sublimes), making it among one of the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical toughness and creep resistance at temperatures over 1400 Ā° C, where lots of steels and conventional porcelains start to soften or deteriorate.
Its reduced coefficient of thermal expansion (~ 4.0 Ć 10 ā»ā¶/ K) incorporated with high thermal conductivity (80– 120 W/(m Ā· K)) allows quick thermal cycling without tragic splitting, an important characteristic for crucible performance.
These innate homes originate from the balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise an extremely secure and largely loaded crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are usually fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a definitive duty in longevity and thermal shock resistance.
Sintered SiC crucibles are created with solid-state or liquid-phase sintering at temperature levels above 2000 Ā° C, frequently with boron or carbon ingredients to enhance densification and grain border cohesion.
This procedure yields a totally thick, fine-grained structure with very little porosity (
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