1. Crystallography and Product Basics of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its exceptional polymorphism– over 250 well-known polytypes– all sharing strong directional covalent bonds however differing in stacking sequences of Si-C bilayers.
One of the most technically pertinent polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal types 4H-SiC and 6H-SiC, each displaying refined variants in bandgap, electron wheelchair, and thermal conductivity that influence their suitability for certain applications.
The toughness of the Si– C bond, with a bond energy of approximately 318 kJ/mol, underpins SiC’s remarkable hardness (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.
In ceramic plates, the polytype is commonly picked based upon the planned use: 6H-SiC is common in architectural applications because of its simplicity of synthesis, while 4H-SiC controls in high-power electronic devices for its superior cost carrier movement.
The large bandgap (2.9– 3.3 eV relying on polytype) likewise makes SiC an outstanding electric insulator in its pure form, though it can be doped to function as a semiconductor in specialized digital devices.
1.2 Microstructure and Phase Purity in Ceramic Plates
The performance of silicon carbide ceramic plates is critically dependent on microstructural functions such as grain size, thickness, phase homogeneity, and the presence of secondary stages or impurities.
Top notch plates are typically made from submicron or nanoscale SiC powders through advanced sintering techniques, causing fine-grained, fully thick microstructures that make best use of mechanical strength and thermal conductivity.
Impurities such as cost-free carbon, silica (SiO TWO), or sintering aids like boron or light weight aluminum must be carefully managed, as they can create intergranular films that minimize high-temperature stamina and oxidation resistance.
Residual porosity, even at reduced levels (
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